Why silicon carbide?

Many have heard about the emerging trend topic in the new energy industry: Silicon carbide. Yet, there are different views and sometimes even misconceptions about the unique qualities of this material. As Leadrive is propelling several advanced technology projects on silicon carbide, we can shed some light on this most relevant topic, based on our newest research.

Clearly, this particular material incorporates special qualities:

-       higher maximum junction temperature

-       higher efficiency, i.e. lower switching & conduction losses

-       smaller thermal resistance than silicon

In the view of Leadrive, the main advantage of using silicon carbide lies in the increased efficiency as well as peak output power. Thus, we developed two different SiC power modules. The first module is a 750V SiC module for passenger vehicles of class A and above. The second is a 1200V SiC module, which can be applied to 800V passenger or commercial vehicles. All SiC modules developed by Leadrive use the latest fourth-generation 750V and 1200V chips provided by ROHM Semiconductor. Taking the 1200V chip as an example, its comprehensive performance has been significantly improved compared with its previous generation, as shown on table 1.

In an extensive R&D process, we have evaluated which number of chips will result in the best performance in addition to cost advantage. Moreover, we developed a specific power module design, including packaging form, electromagnetics (EMC), thermal, structure and manufacturability to fully exploit silicon carbide’s greatest material advantages.

For reference and more information, please read the full-length research paper published on the ROHM Semiconductor website:

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